Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography

Progresses in the design of well-defined electronic band structure and dedicated functionalities rely on the high control of complex architectural device nano-scaled structures. This includes the challenging accurate description of strain fields in crystalline structures, which requires non invasive...

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Detalles Bibliográficos
Autores principales: Chamard, V., Allain, M., Godard, P., Talneau, A., Patriarche, G., Burghammer, M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434906/
https://www.ncbi.nlm.nih.gov/pubmed/25984829
http://dx.doi.org/10.1038/srep09827

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434906/
https://www.ncbi.nlm.nih.gov/pubmed/25984829
http://dx.doi.org/10.1038/srep09827

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