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Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography
Progresses in the design of well-defined electronic band structure and dedicated functionalities rely on the high control of complex architectural device nano-scaled structures. This includes the challenging accurate description of strain fields in crystalline structures, which requires non invasive...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4434906/ https://www.ncbi.nlm.nih.gov/pubmed/25984829 http://dx.doi.org/10.1038/srep09827 |