Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts

Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and P...

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Detalles Bibliográficos
Autores principales: Yoon, Hyong Seo, Joe, Hang-Eun, Jun Kim, Sun, Lee, Hee Sung, Im, Seongil, Min, Byung-Kwon, Jun, Seong Chan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438430/
https://www.ncbi.nlm.nih.gov/pubmed/25990304
http://dx.doi.org/10.1038/srep10440

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438430/
https://www.ncbi.nlm.nih.gov/pubmed/25990304
http://dx.doi.org/10.1038/srep10440

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