Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts

Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and P...

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Autores principales: Yoon, Hyong Seo, Joe, Hang-Eun, Jun Kim, Sun, Lee, Hee Sung, Im, Seongil, Min, Byung-Kwon, Jun, Seong Chan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438430/
https://www.ncbi.nlm.nih.gov/pubmed/25990304
http://dx.doi.org/10.1038/srep10440
_version_ 1782372333691863040
author Yoon, Hyong Seo
Joe, Hang-Eun
Jun Kim, Sun
Lee, Hee Sung
Im, Seongil
Min, Byung-Kwon
Jun, Seong Chan
author_facet Yoon, Hyong Seo
Joe, Hang-Eun
Jun Kim, Sun
Lee, Hee Sung
Im, Seongil
Min, Byung-Kwon
Jun, Seong Chan
author_sort Yoon, Hyong Seo
collection PubMed
description Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS(2) thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH(3) and NO(2) gases based on the metal work function and the Schottky barrier height change.
format Online
Article
Text
id pubmed-4438430
institution National Center for Biotechnology Information
language English
publishDate 2015
publisher Nature Publishing Group
record_format MEDLINE/PubMed
spelling pubmed-44384302015-06-01 Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts Yoon, Hyong Seo Joe, Hang-Eun Jun Kim, Sun Lee, Hee Sung Im, Seongil Min, Byung-Kwon Jun, Seong Chan Sci Rep Article Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type behavior of the MoS(2) thin flakes and the devices showed clear rectifying performance. We also observed the layer dependence in device characteristics and asymmetrically enhanced responses to NH(3) and NO(2) gases based on the metal work function and the Schottky barrier height change. Nature Publishing Group 2015-05-20 /pmc/articles/PMC4438430/ /pubmed/25990304 http://dx.doi.org/10.1038/srep10440 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Yoon, Hyong Seo
Joe, Hang-Eun
Jun Kim, Sun
Lee, Hee Sung
Im, Seongil
Min, Byung-Kwon
Jun, Seong Chan
Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title_full Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title_fullStr Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title_full_unstemmed Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title_short Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
title_sort layer dependence and gas molecule absorption property in mos(2) schottky diode with asymmetric metal contacts
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438430/
https://www.ncbi.nlm.nih.gov/pubmed/25990304
http://dx.doi.org/10.1038/srep10440
work_keys_str_mv AT yoonhyongseo layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT joehangeun layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT junkimsun layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT leeheesung layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT imseongil layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT minbyungkwon layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts
AT junseongchan layerdependenceandgasmoleculeabsorptionpropertyinmos2schottkydiodewithasymmetricmetalcontacts

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