Cargando…

Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts

Surface potential measurement on atomically thin MoS(2) flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS(2) thin flakes. Schottky diode devices using mono- and multi- layer MoS(2) channels were demonstrated by employing Ti and P...

Descripción completa

Detalles Bibliográficos
Autores principales:	Yoon, Hyong Seo, Joe, Hang-Eun, Jun Kim, Sun, Lee, Hee Sung, Im, Seongil, Min, Byung-Kwon, Jun, Seong Chan
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4438430/ https://www.ncbi.nlm.nih.gov/pubmed/25990304 http://dx.doi.org/10.1038/srep10440

Ejemplares similares

Ultrafast 27 GHz cutoff frequency in vertical WSe(2) Schottky diodes with extremely low contact resistance
por: Yang, Sung Jin, et al.
Publicado: (2020)

Work Function Tuning in Two-Dimensional MoS(2) Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts
por: Baik, Seung Su, et al.
Publicado: (2017)

Selective Laser-Assisted Direct Synthesis of MoS(2) for Graphene/MoS(2) Schottky Junction
por: Jeon, Min Ji, et al.
Publicado: (2023)

Controllable Schottky Barriers between MoS(2) and Permalloy
por: Wang, Weiyi, et al.
Publicado: (2014)

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
por: Qiu, Dongri, et al.
Publicado: (2015)

Tuning Schottky Barrier of Single-Layer MoS(2) Field-Effect Transistors with Graphene Electrodes
por: Jang, A-Rang
Publicado: (2022)

Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
por: Gupta, Sachin, et al.
Publicado: (2019)

Ultrasensitive rapid cytokine sensors based on asymmetric geometry two-dimensional MoS(2) diodes
por: De Silva, Thushani, et al.
Publicado: (2022)

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions
por: Tian, He, et al.
Publicado: (2014)

Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
por: Fontana, Marcio, et al.
Publicado: (2013)

Efficient MoWO(3)/VO(2)/MoS(2)/Si UV Schottky photodetectors; MoS(2) optimization and monoclinic VO(2) surface modifications
por: Basyooni, Mohamed A., et al.
Publicado: (2020)

Corrigendum: Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
por: Fontana, Marcio, et al.
Publicado: (2015)

Facile Preparation of Four-Layer MoS(2) Nanosheets and Their Application to Organic Light-Emitting Diode
por: Jiang, Xingwang, et al.
Publicado: (2022)

Carrier Transport Properties of MoS(2) Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation
por: Kim, Sun Jun, et al.
Publicado: (2018)

Schottky Contacts to ZnO-Nanocoated SnSe Powders by Atomic Layer Deposition
por: Kim, Hogyoung, et al.
Publicado: (2022)

Schottky barrier height engineering on MoS(2) field-effect transistors using a polymer surface modifier on a contact electrode
por: Choi, Dongwon, et al.
Publicado: (2023)

Spin Absorption Effect at Ferromagnet/Ge Schottky-Tunnel Contacts
por: Yamada, Michihiro, et al.
Publicado: (2018)

MoS(2)-Based Photodetectors Powered by Asymmetric Contact Structure with Large Work Function Difference
por: Kang, Zhe, et al.
Publicado: (2019)

Charge-transfer-based Gas Sensing Using Atomic-layer MoS(2)
por: Cho, Byungjin, et al.
Publicado: (2015)

Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors
por: Vaknin, Yonatan, et al.
Publicado: (2020)

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS(2)/Metal Schottky Barriers
por: Zhang, Zhaofu, et al.
Publicado: (2022)

Atomic-layer soft plasma etching of MoS(2)
por: Xiao, Shaoqing, et al.
Publicado: (2016)

Layer-by-layer epitaxy of multi-layer MoS(2) wafers
por: Wang, Qinqin, et al.
Publicado: (2022)

Intercalation of Si between MoS(2) layers
por: van Bremen, Rik, et al.
Publicado: (2017)

Ultrafast transient sub-bandgap absorption of monolayer MoS(2)
por: Das, Susobhan, et al.
Publicado: (2021)

Perfect Absorption and Strong Coupling in Supported MoS(2) Multilayers
por: Canales, Adriana, et al.
Publicado: (2023)

Laser Thinning and Patterning of MoS(2) with Layer-by-Layer Precision
por: Hu, Lili, et al.
Publicado: (2017)

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS(2) Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
por: Saenz, Gustavo A., et al.
Publicado: (2018)

Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS(2)
por: Islam, Kazi M., et al.
Publicado: (2022)

Edge contacts accelerate the response of MoS(2) photodetectors
por: Strauß, Fabian, et al.
Publicado: (2023)

MoS(2)/MXene Aerogel with Conformal Heterogeneous Interfaces Tailored by Atomic Layer Deposition for Tunable Microwave Absorption
por: Yang, Junjie, et al.
Publicado: (2022)

Understanding of MoS(2)/GaN Heterojunction Diode and its Photodetection Properties
por: Moun, Monika, et al.
Publicado: (2018)

Strain-Dependent Edge Structures in MoS(2) Layers
por: Tinoco, Miguel, et al.
Publicado: (2017)

Quantification of defects engineered in single layer MoS(2)
por: Aryeetey, Frederick, et al.
Publicado: (2020)

Junction investigation of graphene/silicon Schottky diodes
por: Mohammed, Muatez, et al.
Publicado: (2012)

Fully rubbery Schottky diode and integrated devices
por: Jang, Seonmin, et al.
Publicado: (2022)

Surface proximity effect enables layer-by-layer growth of MoS(2)
por: Chai, Yang
Publicado: (2022)

Polarization-dependent optical absorption of MoS(2) for refractive index sensing
por: Tan, Yang, et al.
Publicado: (2014)

Direct Transformation of Crystalline MoO(3) into Few-Layers MoS(2)
por: Carrascoso, Felix, et al.
Publicado: (2020)

Tuneable Schottky contact of MoSi(2)N(4)/TaS(2) van der Waals heterostructure
por: Xia, Jinglin, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_2iab0n8kb2h2932gnhic493ips