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Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes
Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4440211/ https://www.ncbi.nlm.nih.gov/pubmed/25994377 http://dx.doi.org/10.1038/srep10631 |
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author | Huang, Yifeng Deng, Zexiang Wang, Weiliang Liang, Chaolun She, Juncong Deng, Shaozhi Xu, Ningsheng |
author_facet | Huang, Yifeng Deng, Zexiang Wang, Weiliang Liang, Chaolun She, Juncong Deng, Shaozhi Xu, Ningsheng |
author_sort | Huang, Yifeng |
collection | PubMed |
description | Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the experimental findings and the physical insight into the field induced crystalline-to-amorphous phase transformation on the surface of the Si nano-cathode. The crystalline Si tip apex deformed to amorphous structure at a low macroscopic field (0.6~1.65 V/nm) with an ultra-low emission current (1~10 pA). First-principle calculation suggests that the strong electrostatic force exerting on the electrons in the surface lattices would take the account for the field-induced atomic migration that result in an amorphization. The arsenic-dopant in the Si surface lattice would increase the inner stress as well as the electron density, leading to a lower amorphization field. Highly reliable Si nano-cathodes were obtained by employing diamond like carbon coating to enhance the electron emission and thus decrease the surface charge accumulation. The findings are crucial for developing highly reliable Si-based nano-scale vacuum channel transistors and have the significance for future Si nano-electronic devices with narrow separation. |
format | Online Article Text |
id | pubmed-4440211 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2015 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-44402112015-05-29 Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes Huang, Yifeng Deng, Zexiang Wang, Weiliang Liang, Chaolun She, Juncong Deng, Shaozhi Xu, Ningsheng Sci Rep Article Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. The improvement in cathode reliability is one of the major challenges to obtain high performance vacuum channel transistors. We report the experimental findings and the physical insight into the field induced crystalline-to-amorphous phase transformation on the surface of the Si nano-cathode. The crystalline Si tip apex deformed to amorphous structure at a low macroscopic field (0.6~1.65 V/nm) with an ultra-low emission current (1~10 pA). First-principle calculation suggests that the strong electrostatic force exerting on the electrons in the surface lattices would take the account for the field-induced atomic migration that result in an amorphization. The arsenic-dopant in the Si surface lattice would increase the inner stress as well as the electron density, leading to a lower amorphization field. Highly reliable Si nano-cathodes were obtained by employing diamond like carbon coating to enhance the electron emission and thus decrease the surface charge accumulation. The findings are crucial for developing highly reliable Si-based nano-scale vacuum channel transistors and have the significance for future Si nano-electronic devices with narrow separation. Nature Publishing Group 2015-05-21 /pmc/articles/PMC4440211/ /pubmed/25994377 http://dx.doi.org/10.1038/srep10631 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Huang, Yifeng Deng, Zexiang Wang, Weiliang Liang, Chaolun She, Juncong Deng, Shaozhi Xu, Ningsheng Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title | Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title_full | Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title_fullStr | Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title_full_unstemmed | Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title_short | Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes |
title_sort | field-induced crystalline-to-amorphous phase transformation on the si nano-apex and the achieving of highly reliable si nano-cathodes |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4440211/ https://www.ncbi.nlm.nih.gov/pubmed/25994377 http://dx.doi.org/10.1038/srep10631 |
work_keys_str_mv | AT huangyifeng fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT dengzexiang fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT wangweiliang fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT liangchaolun fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT shejuncong fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT dengshaozhi fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes AT xuningsheng fieldinducedcrystallinetoamorphousphasetransformationonthesinanoapexandtheachievingofhighlyreliablesinanocathodes |