A Unique Approach to Generate Self-Aligned SiO(2)/Ge/SiO(2)/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step

We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO(2)/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO(2) layer between the Ge QD and SiGe shell fabricated during the single-step process is the resul...

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Detalles Bibliográficos
Autores principales: Lai, Wei-Ting, Yang, Kuo-Ching, Hsu, Ting-Chia, Liao, Po-Hsiang, George, Thomas, Li, Pei-Wen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4440870/
https://www.ncbi.nlm.nih.gov/pubmed/26019699
http://dx.doi.org/10.1186/s11671-015-0927-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4440870/
https://www.ncbi.nlm.nih.gov/pubmed/26019699
http://dx.doi.org/10.1186/s11671-015-0927-y

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