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A Unique Approach to Generate Self-Aligned SiO(2)/Ge/SiO(2)/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
We report a first-of-its-kind, unique approach for generating a self-aligned, gate-stacking heterostructure of Ge quantum dot (QD)/SiO(2)/SiGe shell on Si in a single fabrication step. The 4-nm-thick SiO(2) layer between the Ge QD and SiGe shell fabricated during the single-step process is the resul...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4440870/ https://www.ncbi.nlm.nih.gov/pubmed/26019699 http://dx.doi.org/10.1186/s11671-015-0927-y |