Electronic Band Structure and Sub-band-gap Absorption of Nitrogen Hyperdoped Silicon

We investigated the atomic geometry, electronic band structure, and optical absorption of nitrogen hyperdoped silicon based on first-principles calculations. The results show that all the paired nitrogen defects we studied do not introduce intermediate band, while most of single nitrogen defects can...

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Detalles Bibliográficos
Autores principales: Zhu, Zhen, Shao, Hezhu, Dong, Xiao, Li, Ning, Ning, Bo-Yuan, Ning, Xi-Jing, Zhao, Li, Zhuang, Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444955/
https://www.ncbi.nlm.nih.gov/pubmed/26012369
http://dx.doi.org/10.1038/srep10513

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4444955/
https://www.ncbi.nlm.nih.gov/pubmed/26012369
http://dx.doi.org/10.1038/srep10513

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