Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm

We investigated optical properties of In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam epitaxy. By using the In-flush technique for setting the height of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μm regime, which can be utilize...

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Detalles Bibliográficos
Autores principales: Kitamura, Shigehiro, Senshu, Masaya, Katsuyama, Toshio, Hino, Yuji, Ozaki, Nobuhiko, Ohkouchi, Shunsuke, Sugimoto, Yoshimasa, Hogg, Richard A
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4446289/
https://www.ncbi.nlm.nih.gov/pubmed/26034422
http://dx.doi.org/10.1186/s11671-015-0941-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4446289/
https://www.ncbi.nlm.nih.gov/pubmed/26034422
http://dx.doi.org/10.1186/s11671-015-0941-0

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