High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films

An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS(2)) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-laye...

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Detalles Bibliográficos
Autores principales: Iqbal, M Waqas, Iqbal, M Zahir, Khan, M Farooq, Shehzad, M Arslan, Seo, Yongho, Park, Jong Hyun, Hwang, Chanyong, Eom, Jonghwa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4450543/
https://www.ncbi.nlm.nih.gov/pubmed/26030008
http://dx.doi.org/10.1038/srep10699

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4450543/
https://www.ncbi.nlm.nih.gov/pubmed/26030008
http://dx.doi.org/10.1038/srep10699

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