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High-mobility and air-stable single-layer WS(2) field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films
An emerging electronic material as one of transition metal dichalcogenides (TMDCs), tungsten disulfide (WS(2)) can be exfoliated as an atomically thin layer and can compensate for the drawback of graphene originating from a gapless band structure. A direct bandgap, which is obtainable in single-laye...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4450543/ https://www.ncbi.nlm.nih.gov/pubmed/26030008 http://dx.doi.org/10.1038/srep10699 |