Carrier type inversion in quasi-free standing graphene: studies of local electronic and structural properties

We investigate the local surface potential and Raman characteristics of as-grown and ex-situ hydrogen intercalated quasi-free standing graphene on 4H-SiC(0001) grown by chemical vapor deposition. Upon intercalation, transport measurements reveal a change in the carrier type from n- to p-type, accomp...

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Detalles Bibliográficos
Autores principales: Melios, Christos, Panchal, Vishal, Giusca, Cristina E., Strupiński, Włodek, Silva, S. Ravi P., Kazakova, Olga
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4450755/
https://www.ncbi.nlm.nih.gov/pubmed/26030153
http://dx.doi.org/10.1038/srep10505

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4450755/
https://www.ncbi.nlm.nih.gov/pubmed/26030153
http://dx.doi.org/10.1038/srep10505

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