Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature

We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga(2)O(3)) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH(4)NO(3)) and gallium nitrate (Ga(NO(3))(3)) by electrochemical deposition (ECD) method at room temperature...

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Detalles Bibliográficos
Autores principales: Rashiddy Wong, Freddawati, Ahmed Ali, Amgad, Yasui, Kanji, Hashim, Abdul Manaf
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451189/
https://www.ncbi.nlm.nih.gov/pubmed/26055478
http://dx.doi.org/10.1186/s11671-015-0943-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451189/
https://www.ncbi.nlm.nih.gov/pubmed/26055478
http://dx.doi.org/10.1186/s11671-015-0943-y

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