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Seed/Catalyst-Free Growth of Gallium-Based Compound Materials on Graphene on Insulator by Electrochemical Deposition at Room Temperature
We report the growth of gallium-based compounds, i.e., gallium oxynitride (GaON) and gallium oxide (Ga(2)O(3)) on multilayer graphene (MLG) on insulator using a mixture of ammonium nitrate (NH(4)NO(3)) and gallium nitrate (Ga(NO(3))(3)) by electrochemical deposition (ECD) method at room temperature...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451189/ https://www.ncbi.nlm.nih.gov/pubmed/26055478 http://dx.doi.org/10.1186/s11671-015-0943-y |