Direct growth of freestanding GaN on C-face SiC by HVPE

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover,...

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Detalles Bibliográficos
Autores principales: Tian, Yuan, Shao, Yongliang, Wu, Yongzhong, Hao, Xiaopeng, Zhang, Lei, Dai, Yuanbin, Huo, Qin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/
https://www.ncbi.nlm.nih.gov/pubmed/26034939
http://dx.doi.org/10.1038/srep10748

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451798/
https://www.ncbi.nlm.nih.gov/pubmed/26034939
http://dx.doi.org/10.1038/srep10748

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