Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays

One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4–3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-sc...

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Detalles Bibliográficos
Autores principales: Wook Shin, Hyun, Jun Lee, Sang, Gun Kim, Doo, Bae, Myung-Ho, Heo, Jaeyeong, Jin Choi, Kyoung, Jun Choi, Won, Choe, Jeong-woo, Cheol Shin, Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451803/
https://www.ncbi.nlm.nih.gov/pubmed/26035286
http://dx.doi.org/10.1038/srep10764

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4451803/
https://www.ncbi.nlm.nih.gov/pubmed/26035286
http://dx.doi.org/10.1038/srep10764

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