Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction

Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silic...

Descripción completa

Detalles Bibliográficos
Autores principales: Benediktovitch, Andrei, Zhylik, Alexei, Ulyanenkova, Tatjana, Myronov, Maksym, Ulyanenkov, Alex
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2015
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453970/
https://www.ncbi.nlm.nih.gov/pubmed/26089757
http://dx.doi.org/10.1107/S1600576715005397

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453970/
https://www.ncbi.nlm.nih.gov/pubmed/26089757
http://dx.doi.org/10.1107/S1600576715005397

Ejemplares similares