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Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction
Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silic...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453970/ https://www.ncbi.nlm.nih.gov/pubmed/26089757 http://dx.doi.org/10.1107/S1600576715005397 |