Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup

This study is carried out in the context of III–V semiconductor monolithic integration on silicon for optoelectronic device applications. X-ray diffraction is combined with atomic force microscopy and scanning transmission electron microscopy for structural characterization of GaP nanolayers grown o...

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Detalles Bibliográficos
Autores principales: Ping Wang, Yan, Letoublon, Antoine, Nguyen Thanh, Tra, Bahri, Mounib, Largeau, Ludovic, Patriarche, Gilles, Cornet, Charles, Bertru, Nicolas, Le Corre, Alain, Durand, Olivier
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2015
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453976/
https://www.ncbi.nlm.nih.gov/pubmed/26089763
http://dx.doi.org/10.1107/S1600576715009954

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4453976/
https://www.ncbi.nlm.nih.gov/pubmed/26089763
http://dx.doi.org/10.1107/S1600576715009954

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