The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The first quantized energy level in the inversion laye...

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Detalles Bibliográficos
Autores principales: Mao, Ling-Feng, Ning, Huan-Sheng, Wang, Jin-Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2015
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4454566/
https://www.ncbi.nlm.nih.gov/pubmed/26039589
http://dx.doi.org/10.1371/journal.pone.0128438

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4454566/
https://www.ncbi.nlm.nih.gov/pubmed/26039589
http://dx.doi.org/10.1371/journal.pone.0128438

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