Novel 14-nm Scallop-Shaped FinFETs (S-FinFETs) on Bulk-Si Substrate

In this study, novel p-type scallop-shaped fin field-effect transistors (S-FinFETs) are fabricated using an all-last high-k/metal gate (HKMG) process on bulk-silicon (Si) substrates for the first time. In combination with the structure advantage of conventional Si nanowires, the proposed S-FinFETs p...

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Detalles Bibliográficos
Autores principales: Xu, Weijia, Yin, Huaxiang, Ma, Xiaolong, Hong, Peizhen, Xu, Miao, Meng, Lingkuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456591/
https://www.ncbi.nlm.nih.gov/pubmed/26055484
http://dx.doi.org/10.1186/s11671-015-0958-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456591/
https://www.ncbi.nlm.nih.gov/pubmed/26055484
http://dx.doi.org/10.1186/s11671-015-0958-4

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