Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al(2)O(3)/HfO(2) tunnel oxide

In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al(2)O(3)/HfO(2) tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The r...

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Detalles Bibliográficos
Autores principales: El-Atab, Nazek, Turgut, Berk Berkan, Okyay, Ali K, Nayfeh, Munir, Nayfeh, Ammar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456595/
https://www.ncbi.nlm.nih.gov/pubmed/26055483
http://dx.doi.org/10.1186/s11671-015-0957-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456595/
https://www.ncbi.nlm.nih.gov/pubmed/26055483
http://dx.doi.org/10.1186/s11671-015-0957-5

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