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Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al(2)O(3)/HfO(2) tunnel oxide
In this work, we demonstrate a non-volatile metal-oxide semiconductor (MOS) memory with Quattro-layer graphene nanoplatelets as charge storage layer with asymmetric Al(2)O(3)/HfO(2) tunnel oxide and we compare it to the same memory structure with 2.85-nm Si nanoparticles charge trapping layer. The r...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456595/ https://www.ncbi.nlm.nih.gov/pubmed/26055483 http://dx.doi.org/10.1186/s11671-015-0957-5 |