All-optical coherent population trapping with defect spin ensembles in silicon carbide

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be...

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Detalles Bibliográficos
Autores principales: Zwier, Olger V., O’Shea, Danny, Onur, Alexander R., van der Wal, Caspar H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456942/
https://www.ncbi.nlm.nih.gov/pubmed/26047132
http://dx.doi.org/10.1038/srep10931

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4456942/
https://www.ncbi.nlm.nih.gov/pubmed/26047132
http://dx.doi.org/10.1038/srep10931

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