Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables. These improvements, which emerge from strain-induced modifications to the electronic band structure, necessitate new ultra-sensit...

Descripción completa

Detalles Bibliográficos
Autores principales: Fluegel, Brian, Mialitsin, Aleksej V., Beaton, Daniel A., Reno, John L., Mascarenhas, Angelo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Pub. Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4458876/
https://www.ncbi.nlm.nih.gov/pubmed/26017853
http://dx.doi.org/10.1038/ncomms8136

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4458876/
https://www.ncbi.nlm.nih.gov/pubmed/26017853
http://dx.doi.org/10.1038/ncomms8136

Ejemplares similares