A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the ox...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhou, Xilin, Dong, Weiling, Zhang, Hao, Simpson, Robert E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4464072/
https://www.ncbi.nlm.nih.gov/pubmed/26068587
http://dx.doi.org/10.1038/srep11150

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4464072/
https://www.ncbi.nlm.nih.gov/pubmed/26068587
http://dx.doi.org/10.1038/srep11150

Ejemplares similares