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A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation
Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the ox...
Autores principales: | Zhou, Xilin, Dong, Weiling, Zhang, Hao, Simpson, Robert E. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4464072/ https://www.ncbi.nlm.nih.gov/pubmed/26068587 http://dx.doi.org/10.1038/srep11150 |
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