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A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the ox...

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Detalles Bibliográficos
Autores principales: Zhou, Xilin, Dong, Weiling, Zhang, Hao, Simpson, Robert E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4464072/
https://www.ncbi.nlm.nih.gov/pubmed/26068587
http://dx.doi.org/10.1038/srep11150

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