Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated...

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Detalles Bibliográficos
Autores principales: Chen, G., Wang, X. Q., Rong, X., Wang, P., Xu, F. J., Tang, N., Qin, Z. X., Chen, Y. H., Shen, B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473535/
https://www.ncbi.nlm.nih.gov/pubmed/26089133
http://dx.doi.org/10.1038/srep11485

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473535/
https://www.ncbi.nlm.nih.gov/pubmed/26089133
http://dx.doi.org/10.1038/srep11485

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