Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated...

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Autores principales: Chen, G., Wang, X. Q., Rong, X., Wang, P., Xu, F. J., Tang, N., Qin, Z. X., Chen, Y. H., Shen, B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473535/
https://www.ncbi.nlm.nih.gov/pubmed/26089133
http://dx.doi.org/10.1038/srep11485
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author Chen, G.
Wang, X. Q.
Rong, X.
Wang, P.
Xu, F. J.
Tang, N.
Qin, Z. X.
Chen, Y. H.
Shen, B.
author_facet Chen, G.
Wang, X. Q.
Rong, X.
Wang, P.
Xu, F. J.
Tang, N.
Qin, Z. X.
Chen, Y. H.
Shen, B.
author_sort Chen, G.
collection PubMed
description Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3–5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells.
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spelling pubmed-44735352015-07-13 Intersubband Transition in GaN/InGaN Multiple Quantum Wells Chen, G. Wang, X. Q. Rong, X. Wang, P. Xu, F. J. Tang, N. Qin, Z. X. Chen, Y. H. Shen, B. Sci Rep Article Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated from the ISBT has been successfully observed at infrared regime covering the 3–5 μm atmosphere window, where the central absorption wavelength is modulated by adjusting the quantum well width. With increasing the quantum well thickness, the ISBT center wave length blue shifts at thickness less than 2.8 nm and then redshifts with further increase of the well thickness. The non-monotonic trend is most likely due to the polarization induced asymmetric shape of the quantum wells. Nature Publishing Group 2015-06-19 /pmc/articles/PMC4473535/ /pubmed/26089133 http://dx.doi.org/10.1038/srep11485 Text en Copyright © 2015, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Chen, G.
Wang, X. Q.
Rong, X.
Wang, P.
Xu, F. J.
Tang, N.
Qin, Z. X.
Chen, Y. H.
Shen, B.
Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title_full Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title_fullStr Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title_full_unstemmed Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title_short Intersubband Transition in GaN/InGaN Multiple Quantum Wells
title_sort intersubband transition in gan/ingan multiple quantum wells
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473535/
https://www.ncbi.nlm.nih.gov/pubmed/26089133
http://dx.doi.org/10.1038/srep11485
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