Cargando…

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated...

Descripción completa

Detalles Bibliográficos
Autores principales:	Chen, G., Wang, X. Q., Rong, X., Wang, P., Xu, F. J., Tang, N., Qin, Z. X., Chen, Y. H., Shen, B.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473535/ https://www.ncbi.nlm.nih.gov/pubmed/26089133 http://dx.doi.org/10.1038/srep11485

Ejemplares similares

Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption
por: Xing, Zhang, et al.
Publicado: (2022)

Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
por: Lin, Tao, et al.
Publicado: (2017)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
por: Rong, X., et al.
Publicado: (2015)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
por: Lin, Tao, et al.
Publicado: (2018)

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
por: Zhu, Yadan, et al.
Publicado: (2017)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes
por: Sarzyński, Marcin, et al.
Publicado: (2019)

Investigation on the corrosive effect of NH(3) during InGaN/GaN multi-quantum well growth in light emitting diodes
por: Yang, J., et al.
Publicado: (2017)

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier
por: Zhou, Xiaorun, et al.
Publicado: (2017)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires
por: Park, Ji-Hyeon, et al.
Publicado: (2016)

Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Santiago, Svette Reina Merden, et al.
Publicado: (2018)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
por: Kundys, Dmytro, et al.
Publicado: (2016)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
por: Lottigier, Pierre, et al.
Publicado: (2023)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
por: Liu, Wei, et al.
Publicado: (2023)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
por: Ben, Yuhao, et al.
Publicado: (2021)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Correction: Tunnel injection from WS(2) quantum dots to InGaN/GaN quantum wells
por: Merden Santiago, Svette Reina, et al.
Publicado: (2018)

Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure
por: Yu, Jiadong, et al.
Publicado: (2016)

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
por: Vasileiadis, I. G., et al.
Publicado: (2021)

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate
por: Johar, Muhammad Ali, et al.
Publicado: (2020)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement
por: Fadil, Ahmed, et al.
Publicado: (2014)

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
por: Yang, Haojun, et al.
Publicado: (2017)

Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
por: Zhao, Wan-Ru, et al.
Publicado: (2015)

Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
por: Li, Changfu, et al.
Publicado: (2017)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
por: Park, Youngsin, et al.
Publicado: (2018)

Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields
por: Duque, Carlos M, et al.
Publicado: (2012)

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
por: Mohamed, Ahmed, et al.
Publicado: (2019)

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
por: Zhang, Feng, et al.
Publicado: (2016)

Optoelectronic Performance Variations in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes: Effects of Potential Fluctuation
por: Islam, Abu Bashar Mohammad Hamidul, et al.
Publicado: (2018)

Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells
por: Sun, Haoran, et al.
Publicado: (2023)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

3D fluorescence confocal microscopy of InGaN/GaN multiple quantum well nanorods from a light absorption perspective
por: Gu, Yan, et al.
Publicado: (2021)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_v517qc4tfifv47mihap02kv8u5