Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained...

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Detalles Bibliográficos
Autores principales: Wang, Wenliang, Yang, Weijia, Liu, Zuolian, Wang, Haiyan, Wen, Lei, Li, Guoqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473646/
https://www.ncbi.nlm.nih.gov/pubmed/26089026
http://dx.doi.org/10.1038/srep11480

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4473646/
https://www.ncbi.nlm.nih.gov/pubmed/26089026
http://dx.doi.org/10.1038/srep11480

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