Suppression of non-radiative surface recombination by N incorporation in GaAs/GaNAs core/shell nanowires

III-V semiconductor nanowires (NWs) such as GaAs NWs form an interesting artificial materials system promising for applications in advanced optoelectronic and photonic devices, thanks to the advantages offered by the 1D architecture and the possibility to combine it with the main-stream silicon tech...

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Detalles Bibliográficos
Autores principales: Chen, Shula L., Chen, Weimin M., Ishikawa, Fumitaro, Buyanova, Irina A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4477342/
https://www.ncbi.nlm.nih.gov/pubmed/26100755
http://dx.doi.org/10.1038/srep11653

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4477342/
https://www.ncbi.nlm.nih.gov/pubmed/26100755
http://dx.doi.org/10.1038/srep11653

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