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MoS(2) Heterojunctions by Thickness Modulation
In this work, we report lateral heterojunction formation in as-exfoliated MoS(2) flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurr...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2015
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4485222/ https://www.ncbi.nlm.nih.gov/pubmed/26121940 http://dx.doi.org/10.1038/srep10990 |
Sumario: | In this work, we report lateral heterojunction formation in as-exfoliated MoS(2) flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS(2) junctions with important implications for exploring novel optoelectronic devices. |
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