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MoS(2) Heterojunctions by Thickness Modulation

In this work, we report lateral heterojunction formation in as-exfoliated MoS(2) flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurr...

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Detalles Bibliográficos
Autores principales: Tosun, Mahmut, Fu, Deyi, Desai, Sujay B., Ko, Changhyun, Seuk Kang, Jeong, Lien, Der-Hsien, Najmzadeh, Mohammad, Tongay, Sefaattin, Wu, Junqiao, Javey, Ali
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4485222/
https://www.ncbi.nlm.nih.gov/pubmed/26121940
http://dx.doi.org/10.1038/srep10990
Descripción
Sumario:In this work, we report lateral heterojunction formation in as-exfoliated MoS(2) flakes by thickness modulation. Kelvin probe force microscopy is used to map the surface potential at the monolayer-multilayer heterojunction, and consequently the conduction band offset is extracted. Scanning photocurrent microscopy is performed to investigate the spatial photocurrent response along the length of the device including the source and the drain contacts as well as the monolayer-multilayer junction. The peak photocurrent is measured at the monolayer-multilayer interface, which is attributed to the formation of a type-I heterojunction. The work presents experimental and theoretical understanding of the band alignment and photoresponse of thickness modulated MoS(2) junctions with important implications for exploring novel optoelectronic devices.