Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography

Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (small...

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Detalles Bibliográficos
Autores principales: Kazemi, Alireza, He, Xiang, Alaie, Seyedhamidreza, Ghasemi, Javad, Dawson, Noel Mayur, Cavallo, Francesca, Habteyes, Terefe G., Brueck, Steven R. J., Krishna, Sanjay
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4486951/
https://www.ncbi.nlm.nih.gov/pubmed/26126936
http://dx.doi.org/10.1038/srep11463

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4486951/
https://www.ncbi.nlm.nih.gov/pubmed/26126936
http://dx.doi.org/10.1038/srep11463

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