Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer

The electronic coupling in vertically aligned InAs/GaAs quantum dot (QD) pairs is investigated by photoluminescence (PL) measurements. A thin Al(0.5)Ga(0.5)As barrier greatly changes the energy transfer process and the optical performance of the QD pairs. As a result, the QD PL intensity ratio shows...

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Detalles Bibliográficos
Autores principales: Liu, Yao, Liang, Baolai, Guo, Qinglin, Wang, Shufang, Fu, Guangsheng, Fu, Nian, Wang, Zhiming M, Mazur, Yuriy I, Salamo, Gregory J
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2015
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4489975/
https://www.ncbi.nlm.nih.gov/pubmed/26123271
http://dx.doi.org/10.1186/s11671-015-0973-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4489975/
https://www.ncbi.nlm.nih.gov/pubmed/26123271
http://dx.doi.org/10.1186/s11671-015-0973-5

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