The Integration of Sub-10 nm Gate Oxide on MoS(2) with Ultra Low Leakage and Enhanced Mobility

The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one of the principle problems in MoS(2) based transistors. In this work, we demonstrate sub-10 nm uniform deposition of Al(2)O(3) on MoS(2) basal plane by applying ultra-low energy remote oxygen plasma pretreatment prior to...

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Detalles Bibliográficos
Autores principales: Yang, Wen, Sun, Qing-Qing, Geng, Yang, Chen, Lin, Zhou, Peng, Ding, Shi-Jin, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4491716/
https://www.ncbi.nlm.nih.gov/pubmed/26146017
http://dx.doi.org/10.1038/srep11921

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4491716/
https://www.ncbi.nlm.nih.gov/pubmed/26146017
http://dx.doi.org/10.1038/srep11921

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