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The Integration of Sub-10 nm Gate Oxide on MoS(2) with Ultra Low Leakage and Enhanced Mobility
The integration of ultra-thin gate oxide, especially at sub-10 nm region, is one of the principle problems in MoS(2) based transistors. In this work, we demonstrate sub-10 nm uniform deposition of Al(2)O(3) on MoS(2) basal plane by applying ultra-low energy remote oxygen plasma pretreatment prior to...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4491716/ https://www.ncbi.nlm.nih.gov/pubmed/26146017 http://dx.doi.org/10.1038/srep11921 |