Tunnel junction based memristors as artificial synapses

We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance ch...

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Detalles Bibliográficos
Autores principales: Thomas, Andy, Niehörster, Stefan, Fabretti, Savio, Shepheard, Norman, Kuschel, Olga, Küpper, Karsten, Wollschläger, Joachim, Krzysteczko, Patryk, Chicca, Elisabetta
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2015
Materias:
Neuroscience
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493388/
https://www.ncbi.nlm.nih.gov/pubmed/26217173
http://dx.doi.org/10.3389/fnins.2015.00241

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493388/
https://www.ncbi.nlm.nih.gov/pubmed/26217173
http://dx.doi.org/10.3389/fnins.2015.00241

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