Cargando…
Characterizing the electrical properties of raised S/D junctionless thin-film transistors with a dual-gate structure
This letter demonstrates a p-type raised source-and-drain (raised S/D) junctionless thin-film transistors (JL-TFTs) with a dual-gate structure. The raised S/D structure provides a high saturation current (>1 μA/μm). The subthreshold swing (SS) is 100 mV/decade and the drain-induced barrier loweri...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer-Verlag
2014
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493839/ https://www.ncbi.nlm.nih.gov/pubmed/26089001 http://dx.doi.org/10.1186/1556-276X-9-669 |