RRAM characteristics using a new Cr/GdO(x)/TiN structure

Resistive random access memory (RRAM) characteristics using a new Cr/GdO(x)/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdO(x) film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a tr...

Descripción completa

Detalles Bibliográficos
Autores principales: Jana, Debanjan, Dutta, Mrinmoy, Samanta, Subhranu, Maikap, Siddheswar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493994/
https://www.ncbi.nlm.nih.gov/pubmed/26088980
http://dx.doi.org/10.1186/1556-276X-9-680

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493994/
https://www.ncbi.nlm.nih.gov/pubmed/26088980
http://dx.doi.org/10.1186/1556-276X-9-680

Ejemplares similares