Cargando…

RRAM characteristics using a new Cr/GdO(x)/TiN structure

Resistive random access memory (RRAM) characteristics using a new Cr/GdO(x)/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdO(x) film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a tr...

Descripción completa

Detalles Bibliográficos
Autores principales:	Jana, Debanjan, Dutta, Mrinmoy, Samanta, Subhranu, Maikap, Siddheswar
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493994/ https://www.ncbi.nlm.nih.gov/pubmed/26088980 http://dx.doi.org/10.1186/1556-276X-9-680

Ejemplares similares

Self-compliance RRAM characteristics using a novel W/TaO( x )/TiN structure
por: Maikap, Siddheswar, et al.
Publicado: (2014)

Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrO(x)/GdO(x)/W cross-point memories
por: Jana, Debanjan, et al.
Publicado: (2014)

Impact of electrically formed interfacial layer and improved memory characteristics of IrO(x)/high-κ(x)/W structures containing AlO(x), GdO(x), HfO(x), and TaO(x) switching materials
por: Prakash, Amit, et al.
Publicado: (2013)

Self-compliance-improved resistive switching using Ir/TaO(x)/W cross-point memory
por: Prakash, Amit, et al.
Publicado: (2013)

Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO(x)/TiO(x)/TiN Structure
por: Jana, Debanjan, et al.
Publicado: (2015)

Detection of pH and Enzyme-Free H(2)O(2) Sensing Mechanism by Using GdO(x) Membrane in Electrolyte-Insulator-Semiconductor Structure
por: Kumar, Pankaj, et al.
Publicado: (2016)

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO(3)/WO(x)/W Structure
por: Chakrabarti, Somsubhra, et al.
Publicado: (2016)

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge(0.2)Se(0.8) Film in Cu/GeSe(x)/W Structure
por: Jana, Debanjan, et al.
Publicado: (2015)

Impact of device size and thickness of Al(2)O(3) film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
por: Panja, Rajeswar, et al.
Publicado: (2014)

Improvement of Bipolar Switching Properties of Gd:SiO(x) RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO(2) Treatment
por: Chen, Kai-Huang, et al.
Publicado: (2016)

Illumination Effect on Bipolar Switching Properties of Gd:SiO(2) RRAM Devices Using Transparent Indium Tin Oxide Electrode
por: Chen, Kai-Huang, et al.
Publicado: (2016)

TaO(x)-based resistive switching memories: prospective and challenges
por: Prakash, Amit, et al.
Publicado: (2013)

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
por: Prakash, Amit, et al.
Publicado: (2014)

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO(x) interface
por: Prakash, Amit, et al.
Publicado: (2014)

Comparison of resistive switching characteristics using copper and aluminum electrodes on GeO(x)/W cross-point memories
por: Rahaman, Sheikh Ziaur, et al.
Publicado: (2013)

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaO(x) interface
por: Rahaman, Sheikh Ziaur, et al.
Publicado: (2012)

Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
por: Zhang, Wei, et al.
Publicado: (2017)

Conductive-bridging random access memory: challenges and opportunity for 3D architecture
por: Jana, Debanjan, et al.
Publicado: (2015)

Copper pillar and memory characteristics using Al(2)O(3) switching material for 3D architecture
por: Maikap, Siddheswar, et al.
Publicado: (2014)

Simplified ZrTiO( x )-based RRAM cell structure with rectifying characteristics by integrating Ni/n + -Si diode
por: Lin, Chia-Chun, et al.
Publicado: (2014)

Resistive switching memory characteristics of Ge/GeO(x) nanowires and evidence of oxygen ion migration
por: Prakash, Amit, et al.
Publicado: (2013)

Retention Model of TaO/HfO(x) and TaO/AlO(x) RRAM with Self-Rectifying Switch Characteristics
por: Lin, Yu-De, et al.
Publicado: (2017)

Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure
por: Kumar, Pankaj, et al.
Publicado: (2014)

Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfO(x)/ZnO(x)/TiN Memristive System
por: Wang, Lai-Guo, et al.
Publicado: (2017)

New understanding of hardening mechanism of TiN/SiN(x)-based nanocomposite films
por: Li, Wei, et al.
Publicado: (2013)

Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO( x )/Pt RRAM device
por: Yuan, Fang, et al.
Publicado: (2014)

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array
por: Chen, Chih Yuan, et al.
Publicado: (2019)

Impacts of Cu-Doping on the Performance of La-Based RRAM Devices
por: Wang, Yongte, et al.
Publicado: (2019)

Conduction Mechanism and Improved Endurance in HfO(2)-Based RRAM with Nitridation Treatment
por: Yuan, Fang-Yuan, et al.
Publicado: (2017)

Heteroepitaxial growth of TiN film on MgO (100) by reactive magnetron sputtering
por: Chen, Wei-Chun, et al.
Publicado: (2014)

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrO(x )nano-dots
por: Banerjee, Writam, et al.
Publicado: (2012)

Analysis on the Filament Structure Evolution in Reset Transition of Cu/HfO(2)/Pt RRAM Device
por: Zhang, Meiyun, et al.
Publicado: (2016)

The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO(2)-Based RRAM and Applications for Pattern Recognition
por: Zhou, Zheng, et al.
Publicado: (2017)

TiN nanoparticles: small size-selected fabrication and their quantum size effect
por: Hernández Mainet, Luis Carlos, et al.
Publicado: (2012)

Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition
por: Feng, Yulin, et al.
Publicado: (2019)

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO(2)/TiN Structure for CMOS Applications
por: Xu, Da-Peng, et al.
Publicado: (2017)

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy
por: Hidalgo, JA, et al.
Publicado: (2009)

Fabrication of TiN nanostructure as a hydrogen peroxide sensor by oblique angle deposition
por: Xie, Zheng, et al.
Publicado: (2014)

Space electric field concentrated effect for Zr:SiO(2) RRAM devices using porous SiO(2) buffer layer
por: Chang, Kuan-Chang, et al.
Publicado: (2013)

Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique
por: Han, Runze, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_h1b151pj2snkc020ehk40msa27