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RRAM characteristics using a new Cr/GdO(x)/TiN structure

Resistive random access memory (RRAM) characteristics using a new Cr/GdO(x)/TiN structure with different device sizes ranging from 0.4 × 0.4 to 8 × 8 μm(2) have been reported in this study. Polycrystalline GdO(x) film with a thickness of 17 nm and a small via-hole size of 0.4 μm are observed by a tr...

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Detalles Bibliográficos
Autores principales:	Jana, Debanjan, Dutta, Mrinmoy, Samanta, Subhranu, Maikap, Siddheswar
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2014
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4493994/ https://www.ncbi.nlm.nih.gov/pubmed/26088980 http://dx.doi.org/10.1186/1556-276X-9-680

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