Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes

The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by t...

Descripción completa

Detalles Bibliográficos
Autores principales: Cao, Ronggen, Huang, Gaoshan, Di, Zengfeng, Zhu, Guodong, Mei, Yongfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2014
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494014/
https://www.ncbi.nlm.nih.gov/pubmed/26088987
http://dx.doi.org/10.1186/1556-276X-9-695

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494014/
https://www.ncbi.nlm.nih.gov/pubmed/26088987
http://dx.doi.org/10.1186/1556-276X-9-695

Ejemplares similares