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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by t...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494014/ https://www.ncbi.nlm.nih.gov/pubmed/26088987 http://dx.doi.org/10.1186/1556-276X-9-695 |