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Impact of device size and thickness of Al(2)O(3) film on the Cu pillar and resistive switching characteristics for 3D cross-point memory application
Impact of the device size and thickness of Al(2)O(3) film on the Cu pillars and resistive switching memory characteristics of the Al/Cu/Al(2)O(3)/TiN structures have been investigated for the first time. The memory device size and thickness of Al(2)O(3) of 18 nm are observed by transmission electron...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2014
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4494016/ https://www.ncbi.nlm.nih.gov/pubmed/26088986 http://dx.doi.org/10.1186/1556-276X-9-692 |