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Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory

As DRAM is facing the scaling difficulty in terms of energy cost and reliability, some nonvolatile storage materials were proposed to be the substitute or supplement of main memory. Phase Change Memory (PCM) is one of the most promising nonvolatile memory that could be put into use in the near futur...

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Detalles Bibliográficos
Autores principales: An, Ning, Wang, Rui, Gao, Yuan, Yang, Hailong, Qian, Depei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2015
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4497737/
https://www.ncbi.nlm.nih.gov/pubmed/26158524
http://dx.doi.org/10.1371/journal.pone.0131964