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Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory
As DRAM is facing the scaling difficulty in terms of energy cost and reliability, some nonvolatile storage materials were proposed to be the substitute or supplement of main memory. Phase Change Memory (PCM) is one of the most promising nonvolatile memory that could be put into use in the near futur...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4497737/ https://www.ncbi.nlm.nih.gov/pubmed/26158524 http://dx.doi.org/10.1371/journal.pone.0131964 |