Controlling the on/off current ratio of ferroelectric field-effect transistors

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control...

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Detalles Bibliográficos
Autores principales: Katsouras, Ilias, Zhao, Dong, Spijkman, Mark-Jan, Li, Mengyuan, Blom, Paul W. M., Leeuw, Dago M. de, Asadi, Kamal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498189/
https://www.ncbi.nlm.nih.gov/pubmed/26160465
http://dx.doi.org/10.1038/srep12094

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498189/
https://www.ncbi.nlm.nih.gov/pubmed/26160465
http://dx.doi.org/10.1038/srep12094

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