Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during ‘reading’ and ‘writing’ operations of ReRAM...

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Detalles Bibliográficos
Autores principales: Lee, Keundong, Hwang, Inrok, Lee, Sangik, Oh, Sungtaek, Lee, Dukhyun, Kim, Cheol Kyeom, Nam, Yoonseung, Hong, Sahwan, Yoon, Chansoo, Morgan, Robert B., Kim, Hakseong, Seo, Sunae, Seo, David H., Lee, Sangwook, Park, Bae Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498384/
https://www.ncbi.nlm.nih.gov/pubmed/26161992
http://dx.doi.org/10.1038/srep11279

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498384/
https://www.ncbi.nlm.nih.gov/pubmed/26161992
http://dx.doi.org/10.1038/srep11279

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