Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures

[Image: see text] In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor–liquid–solid grown Ge nanowire and Al contact pads due to the...

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Detalles Bibliográficos
Autores principales: Kral, S., Zeiner, C., Stöger-Pollach, M., Bertagnolli, E., den Hertog, M. I., Lopez-Haro, M., Robin, E., El Hajraoui, K., Lugstein, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498448/
https://www.ncbi.nlm.nih.gov/pubmed/26052733
http://dx.doi.org/10.1021/acs.nanolett.5b01748

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4498448/
https://www.ncbi.nlm.nih.gov/pubmed/26052733
http://dx.doi.org/10.1021/acs.nanolett.5b01748

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